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source: nptelhrd 2009年1月11日
Electronics - VLSI Design by Dr. Nandita Dasgupta, Department of Electrical Engineering, IIT Madras.
Lecture - 1 Introduction on VLSI Design 49:02
Lecture - 2 Bipolar Junction Transistor Fabrication 48:48
Lecture - 3 MOSFET Fabrication for IC 50:13
Lecture - 4 Crystal Structure of Si 50:47
Lecture - 5 Crystal Structure contd 47:57
Lecture - 6 Defects in Crystal + Crystal growth 49:17
Lecture - 7 Crystal growth Contd + Epitaxy I 50:33
Lecture - 8 Epitaxy II - Vapour phase Epitaxy 52:33
Lecture - 9 Epitaxy III - Doping during Epitaxy 43:02
Lecture - 10 Molecular beam Epitaxy 48:22
Lecture - 11 Oxidation I - Kinetics of Oxidation 51:46
Lecture - 12 Oxidation II Oxidation rate constants 51:42
Lecture - 13 Oxidation III - Dopant Redistribution 50:37
Lecture - 14 Oxidation IV - Oxide Charges 44:14
Lecture - 15 Diffusion I - Theory of Diffusion 53:50
Lecture - 16 Diffusion II - Infinite Source 42:53
Lecture - 17 Diffusion III - Actual Doping Profiles 52:10
Lecture - 18 Diffusion IV Diffusion Systems 54:30
Lecture - 19 Ion - Implantation Process 54:54
Lecture - 20 Ion - Implantation Process 51:25
Lecture - 21 Annealing of Damages 51:48
Lecture - 22 Masking during Implantation 53:02
Lecture - 23 Lithography - I 52:43
Lecture - 24 Lithography - II 38:55
Lecture - 25 Wet Chemical Etching 54:10
Lecture - 26 Dry Etching 52:03
Lecture - 27 Plasma Etching Systems 51:59
Lecture - 28 Etching of Si,Sio2,SiN and other materials 52:11
Lecture - 29 Plasma Deposition Process 50:49
Lecture - 30 Metalization - I 50:44
Lecture - 31 Problems in Aluminium Metal contacts 49:00
Lecture - 32 IC BJT - From junction isolation to LOCOS 41:45
Lecture - 33 Problems in LOCOS + Trench isolation 54:34
Lecture - 34 More about BJT Fabrication and Realization 51:04
Lecture - 35 Circuits + Transistors in ECL Circuits 48:04
Lecture - 36 MOSFET I - Metal gate vs Self-aligned Poly-gate 56:36
Lecture - 37 MOSFET II Tailoring of Device Parameters 51:20
Lecture - 38 CMOS Technology 50:06
Lecture - 39 Latch - up in CMOS 40:37
Lecture - 40 BICMOS Technology 44:16
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