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source: nptelhrd 2007年12月7日
Electronics - High Speed Devices & Circuit by Prof. K. N. Bhat. Department of Electrical Engineering. IIT Madras.
1 - Introduction to Basic Concepts 56:47
2-Requirements of High Speed Devices, Circuits & Mat 57:41
3-Classifications & Properties of Compound Semicond 57:16
4-Temary Compound Semiconductor and their Application 56:53
5-Temary Compound Semiconductor and their Appl - 2 57:26
6 - Crystal Structures in GaAs 57:16
7 - Dopants and impurities in GaAs and InP 57:32
8- Brief Overview of GaAs Technology for High Speed 57:25
9 - Epitaxial Techniques for GaAs High Speed Devices 57:10
10 - MBE and LPE for GaAs Epitaxy 57:30
11 - GaAs and InP Devices for Microelectronics 57:19
12 - Metal Semiconductor contacts for MESFET 56:57
13- Metal Semiconductor contacts for MESFET (Contd.) 57:58
14- Metal Semiconductor contacts for MESFET (Contd.) 57:53
15 - Ohmic Contacts on Semiconductors 57:48
16 - Fermi Level Pinning & Schottky Barrier Diodes 57:13
17 - Schottky Barrier Diode 57:25
18 - Schottky Barrier Diodes 55:39
19 -Causes of Non-Idealities-Schottky Barrier Diodes 57:18
20 - MESFET Operation & I-V Characteristics 57:24
21 - MESFET I-V Characteristics Shockley's Model 56:15
22 - MESFET Shockley's Model and Velocity saturation 57:37
23- MESFET Velocity Saturation effect 57:14
24 -MESFET Drain Current Saturation 57:10
25 - MESFET : Effects of channel length and gate length on IDS and gm 57:28
26 - MESFET: Effects of Velocity Saturation 57:37
27 - Velocity Field Characteristics 56:53
28-MESFET-SAINT 57:21
29-SELF Aligned MESFET-SAINT 57:05
30-Hetero Junctions 56:30
31-Hetero Junctions & HEMT 55:55
32-Hetero Junctions & HEMT(Contd) 57:25
33-High Electron Mobility Transistor 56:39
34-HEMT-off Voltage 57:25
35-HEMT 1-V Characteristics and Transconductance 57:35
36-Indium Phosphide Based HEMT 57:32
37-Pseudomorphic HEMT 55:02
38-Hetrojunction Bipolar Transistors(HBT) 54:56
39-Hetrojunction Bipolar Transistors(HBT)-2(Contd) 56:41
40-Hetrojunction Bipolar Transistors(HBT)-3(Contd) 56:55
41-Hetrojunction Bipolar Transistors(HBT)-4(Contd) 56:09
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