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source: UCBerkeley Last updated on 2015年4月30日
Electrical Engineering C247B, 001 - Spring 2015
2015-01-27: Benefits of Scaling II 1:20:24
2015-01-29: Benefits of Scaling III: higher sensitivity 1:23:27
2015-02-03: Fabrication Process Modules I 1:47:22
2015-02-05: Fabrication Process Modules II: 1:23:02
2015-02-10: Surface Micromachining I: 1:20:22
2015-02-12: Surface Micromachining II:
2015-02-17: Surface Micromachining III: MUMPS, design rules, Summit 1:47:22
2015-02-19: Bulk Micromachining 1:49:43
2015-02-24: Mechanics of Materials for MEMS I:
2015-02-26: Mechanics of Materials forMEMS II|no audio after 1:27:52 1:22:07
2015-03-03: Mechanics of Materials for MEMS III: 1:53:04
2015-03-05: Energy Methods I: 1:20:51
2015-03-10: Energy Methods II: 1:20:54
2015-03-12: Equivalent Circuits I: | End of lecture unavailable
2015-03-17: Equivalent Circuits II: 1:17:19
2015-03-31: Lossless Transducers I: 1:17:23
2015-04-02: Lossless Transducers II: 1:20:33
2015-04-07: Equivalent Circuits III: 1:25:04
2015-04-09: Equivalent Circuits IV: 1:23:30
2015-04-21: Sensing Circuits III: 1:23:50
2015-04-28: Sensor Resolution II: 1:20:50
2015-04-30: MEMS-Transistor Integration: 1:06:27
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Showing posts with label B. (figures)-N-Clark Tu_cuong Nguyen. Show all posts
Showing posts with label B. (figures)-N-Clark Tu_cuong Nguyen. Show all posts
2015-07-08
2015-04-13
Microfabrication Technology (Fall 2014) by Clark Tu-cuong Nguyen at UCBerkeley
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source: UCBerkeley Last updated on 2014年12月4日
Electrical Engineering 143, 001 - Fall 2014
Microfabrication Technology - Clark Tu-cuong Nguyen
All Rights Reserved
Electrical Engineering 143 - 2014-09-11: Process Integration 1:16:19
2014-09-16:Layout to Cross-Section, Design Ru 1:20:39
2014-09-18: Lithography I: Radiation Sources, 1:19:30
2014-09-23: Lithography II: Optics, Resolutio 1:21:54
2014-09-25: Oxidation I: Thermal Oxidation Mo 1:22:34
2014-09-30: Oxidation II: Graphs, Dopant Redi 1:22:24
2014-10-02: Physical Film Deposition: Evapora 1:20:56
2014-10-07: Chemical Film Deposition -- LPCVD 1:22:56
2014-10-09: Etching I -- Anisotropy, Selectiv 1:21:19
2014-10-14: Ion Implantation I -- Etching II: 1:20:29
2014-10-16: Ion Implantation I -- Range & Str 1:19:06
2014-10-21: Ion Implantation II -- I/I Throug 1:21:24
2014-10-23: Diffusion I -- Predeposition, Dri 1:18:10
2014-10-28: Diffusion II: 2-Step Diffusion, S 1:19:27
2014-11-04: Diffusion III: Series Resistance, 1:11:36
2014-11-06: Interconnects: Contacts, Metalliz 1:18:51
2014-11-13: Metal MEMS, Adv. CMOS I: Device S 1:15:18
2014-11-18: Adv. CMOS II: Process Flow (cont. 1:19:25
2014-11-20: Adv. Isolation: Problems w/ LOCOS 1:18:10
2014-11-25: Device Characterization I: MOS-CV 1:20:38
2014-12-02: Vt Implant: Threshold Voltage, Sh 1:20:45
2014-12-04: Device Characterization II: MOS D 1:04:31
source: UCBerkeley Last updated on 2014年12月4日
Electrical Engineering 143, 001 - Fall 2014
Microfabrication Technology - Clark Tu-cuong Nguyen
All Rights Reserved
Electrical Engineering 143 - 2014-09-11: Process Integration 1:16:19
2014-09-16:Layout to Cross-Section, Design Ru 1:20:39
2014-09-18: Lithography I: Radiation Sources, 1:19:30
2014-09-23: Lithography II: Optics, Resolutio 1:21:54
2014-09-25: Oxidation I: Thermal Oxidation Mo 1:22:34
2014-09-30: Oxidation II: Graphs, Dopant Redi 1:22:24
2014-10-02: Physical Film Deposition: Evapora 1:20:56
2014-10-07: Chemical Film Deposition -- LPCVD 1:22:56
2014-10-09: Etching I -- Anisotropy, Selectiv 1:21:19
2014-10-14: Ion Implantation I -- Etching II: 1:20:29
2014-10-16: Ion Implantation I -- Range & Str 1:19:06
2014-10-21: Ion Implantation II -- I/I Throug 1:21:24
2014-10-23: Diffusion I -- Predeposition, Dri 1:18:10
2014-10-28: Diffusion II: 2-Step Diffusion, S 1:19:27
2014-11-04: Diffusion III: Series Resistance, 1:11:36
2014-11-06: Interconnects: Contacts, Metalliz 1:18:51
2014-11-13: Metal MEMS, Adv. CMOS I: Device S 1:15:18
2014-11-18: Adv. CMOS II: Process Flow (cont. 1:19:25
2014-11-20: Adv. Isolation: Problems w/ LOCOS 1:18:10
2014-11-25: Device Characterization I: MOS-CV 1:20:38
2014-12-02: Vt Implant: Threshold Voltage, Sh 1:20:45
2014-12-04: Device Characterization II: MOS D 1:04:31
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